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Volumn 49, Issue , 2002, Pages 21-30

Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications

Author keywords

Au NKN Ta2O5 Si MFIS_diode; Ferroelectric non volatile memory; Na0.5K0.5NbO3(NKN) thin film

Indexed keywords

COERCIVE FORCE; ELECTRIC POTENTIAL; HYSTERESIS; NONVOLATILE STORAGE; SODIUM COMPOUNDS;

EID: 33751177802     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718350     Document Type: Article
Times cited : (3)

References (16)
  • 8
    • 33751167907 scopus 로고    scopus 로고
    • Ph. D. thesis, Dept. Inorganic Chemistry, Uppsala Univ. Uppsala, Sweden
    • M. Schuisky, Ph. D. thesis, Dept. Inorganic Chemistry, Uppsala Univ. Uppsala, Sweden (2000)
    • (2000)
    • Schuisky, M.1
  • 13
    • 33751166431 scopus 로고    scopus 로고
    • Ph. D. thesis, Dept. of Physics, Royal Inst. of Tech. Stockholm Sweden
    • C.-R. Cho, Ph. D. thesis, Dept. of Physics, Condensed Matter Physics, Royal Inst. of Tech. Stockholm Sweden (2001).
    • (2001) Condensed Matter Physics
    • Cho, C.-R.1
  • 14
    • 0004005306 scopus 로고
    • John Wiley & Sons, Inc.
    • nd Edition, John Wiley & Sons, Inc. (1981).
    • (1981) nd Edition
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.