Elastic strain field distribution of a self-organized growth lensed-shaped quantum dot by finite element method

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 7, 2005, Pages 1317-1322

  Liu, Yumin ^a,b   Yu, Zhongyuan ^a,b   Yang, Hongbo ^a,b   Huang, Yongzhen ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b State Key Laboratory of Information Photonics and Optical Communications   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Elastic strain field; Quantum dot; Stress

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; STRAIN; STRESSES;

ELASTIC STRAIN FIELD; QUANTUM DOT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 23044461024     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Kikchi Y, Sugii H, Shintani K. Strain profiles in pyramidal quantum dots by means of atomistics simulation. J Appl Phys, 2001, 89(2): 1191
2. Cai Xiangbao. Optical properties of one-dimensional three-component photonic band gap structure. Journal of China University of Posts and Telecommunications, 2003, 10(2): 22
3. Spencer B J, Tersoff J. Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands. Phys Rev B, 2001, 63: 205424
4. Romanov A E, Beltz G E, Fischer W T, et al. Elastic fields of quantum dots in subsurface layers. J Appl Phys, 2001, 89(8): 4523
5. Gong Qian, Liang Jiben, Xu Bo, et al. The results analysis of InAs quantum dot by the atom force microscope. Chinese Journal of Semiconductors, 1999, 20(8): 622(in Chinese)