Comment on "memory effect and negative differential resistance by electrode-induced two-dimensional single-electron tunneling in molecular and organic electronic devices"

Advanced Materials

Volumn 18, Issue 21, 2006, Pages 2805-2806

  Majumdar, Himadri S ^a   Baral, Jayanta K ^a   Laiho, Ari ^b   Ruokolainen, Janne ^b   Ikkala, Olli ^b   Österbacka, Ronald ^a  

^a ÅBO AKADEMI UNIVERSITY   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751061195     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200600008     Document Type: Note

References (4)

1. W. Tang, H. Shi, G. Xu, B. S. Ong, Z. D. Popovic, J. Deng, J. Zhao, G. Rao, Adv. Mat. 2005, 17, 2307.
2. M. Shin, S. Lee, K. W. Park, E. Lee, Phys. Rev. Lett. 1998, 80, 5774.
3. H. S. Majumdar, J. K. Baral, R. Österbacka, O. Ikkala, H. Stubb, Org. Electron. 2005, 6, 188.
4. L. Ma, J. Liu, S. Pyo, Y. Yang, Appl. Phys. Lett. 2003, 82, 1419.