Ultra-shallow junctions for the 65nm node based on defect and stress engineering

Materials Research Society Symposium Proceedings

Volumn 864, Issue , 2005, Pages 113-118

  Moroz, Victor ^a   Foad, Majeed ^b   Graoui, Houda ^b   Nouri, Faran ^b   Pramanik, Dipu ^a   Felch, Susan ^b  

^a SYNOPSYS INC   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CARBON; GERMANIUM; SEMICONDUCTOR JUNCTIONS; SILICON;

BORON ACTIVATION; IMPLANT ENERGIES;

DEFECTS;

EID: 30544448310     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e3.5     Document Type: Conference Paper

References (5)

1. TSUPREM-4 User's Guide, version W-2004.09, Synopsys, 2004.
2. S. Mirabella, S. Scalese, A. Terrasi, F. Priolo, A. Coati, D. De Salvador, E. Napolitani, and M. Berti, Mat. Res. Soc. Symp. Proc., v. 717, p. C5.5.1, 2002.
3. R. People, IEEE J. Quantum Electronics, v. QE-22, n. 9, p. 1696, 1986.
4. M. R. Kump, Doctoral Dissertation, Stanford University, Stanford, California, March 1988.
5. H. Bracht, N. A. Stolwijk, and H. Mehrer, Semiconductor Silicon Proceedings, v. 94, no. 10, p. 593, 1994.