Impact of SiON on embedded nonvolatile MNOS memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 885-888

  Ishimaru, T ^a   Matsuzaki, N ^a   Okuyama, Y ^a   Mine, T ^a   Watanabe, K ^a   Yugami, J ^b   Kume, H ^a   Ito, F ^b   Kawashima, Y ^b   Sakai, T ^b   Kanamaru, Y ^b   Ishii, Y ^b   Mizuno, M ^b   Kamohara, S ^b   Hashimoto, T ^b   Okuyama, K ^b   Kuroda, K ^b   Kubota, K ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRON TUNNELING; EMBEDDED SYSTEMS; FLASH MEMORY; HIGH TEMPERATURE EFFECTS; NITRIDES; OXYGEN; PERMITTIVITY; RELIABILITY; SILICON COMPOUNDS; ELECTRON INJECTION; SILICON NITRIDE;

DATA RETENTION; HOLE INJECTION; MNOS MEMORY; NITRIDE MEMORIES;

MOS DEVICES; CHARGE INJECTION;

DATA-RETENTION; ELECTRON CONDUCTION; EMBEDDED APPLICATION; GATE HOLE; HIGH RELIABILITY; HOLES INJECTION; MNOS MEMORY; NONVOLATILE; PERFORMANCE RELIABILITY; TRAPPING MATERIALS;

EID: 21644474000     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C. T. Swift et al., "An embedded 90nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase," IEDM Tech. Dig., pp.927-930, 2002.
2. J. -H. Kim et al., "Highly manufacturable SONOS non-volatile memory for the embedded SoC solution," VLSI Tech. Dig., pp.31-32, 2003.
3. T. Tanaka et al., "A 512kB MONOS type flash memory module embedded in a microcontroller," VLSI Circ. Dig., pp.221-222, 2003.
4. N. Matsuzaki et al., "A 0.18-□m embedded MNOS-type non-volatile memory for high-frequency and low-voltage operation," Ext. Abst. SSDM, pp.204-205, 2003.
5. F. Ito et al., "A novel MNOS technology using gate hole injection in erase operation for embedded nonvolatile memory applications," VLSI Tech. Dig., pp.80-81, 2004.