Nanometric thinning of bonded silicon wafers using sacrificial anodic oxidation and investigated by X-ray reflectivity

Surface Science

Volumn 600, Issue 22, 2006, Pages 4923-4930

  Buttard, D ^a,b   Krieg, C ^a   Fournel, F ^c  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CEA LETI   (France)

Author keywords

Sacrificial anodic oxidation; Silicon; Thinning; Wafer bonding; X ray reflectivity

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC RESISTANCE; KINEMATICS; SILICON WAFERS; X RAY ANALYSIS;

SACRIFICIAL ANODIC OXIDATION; WAFER BONDING; X-RAY REFLECTIVITY;

THIN FILMS;

EID: 33750952078     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.09.022     Document Type: Article

References (27)

1. Schmidt P.F., and Michel W. J. Electrochem. Soc. 104 (1957) 230
2. Gaspard F., Halimaoui A., and Sarrabayrouse G. Rev. Phys. Appl. 22 (1987) 65
3. Hung T.F., Wong H., Cheng Y.C., and Pun C.K. J. Electrochem. Soc. 138 (1991) 3747
4. Morfouli P., and Pananakakis G. Phys. Status Solidi A 11 (1989) 529
5. Mende G., Hensel E., Fenski F., and Flietner H. Thin Solid Films 168 (1989) 51
6. Bardwell J.A., Clark K.B., Mitchell D.F., Bisaillion D.A., Sproule G.I., MacDougall B., and Graham M.J. J. Electrochem. Soc. 140 (1993) 2135
7. Bardwell J.A., Draper N., and Schmuki P. J. Appl. Phys. 79 (1996) 8761
8. Allegretto E.M., and Barwell J.A. J. Vac. Sci. Technol. A 14 (1996) 2437
9. Cullis G., Canham L.T., and Calcott P.D.J. J. Appl. Phys. 82 (1997) 909
10. Buttard D., Bellet D., and Dolino G. J. Appl. Phys. 79 (1996) 8060
11. Serre C., Barret S., and Herino R. J. Electrochem. Soc. 141 (1994) 2049
12. Q.Y. Tong, U. Gösele, Semi-conductor wafer bonding in Science and Technol. Ser. The Electrochemical Society Series, 1999.
13. Leroy F., Eymery J., Gentile P., and Fournel F. Surf. Sci. 545 (2003) 211
14. Fournel F., Moriceau H., Magnéa N., Eymery J., Buttard D., Rouvière J.L., Rousseau K., and Aspar B. Thin Solid Films 380 (2000) 10
15. Fournel F., Rousseau K., Moriceau H., Eymery J., Rouvière J.L., Magnéa N., and Aspar B. Appl. Phys. Lett. 80 (2002) 793
16. Bardwell J.A., Schmuki P., Sproule G.I., Landheer D., and Mitchell D.F. J. Electrochem. Soc. 142 (1995) 3933
17. Bardwell J.A., Draper N., and Schmuki P. J. Appl. Phys. 79 (1996) 8761
18. Parratt L.G. Phys. Rev. 95 (1954) 359
19. Rieutord F., Eymery J., Fournel F., Buttard D., Oeser R., Plantevin O., Moriceau H., and Aspar B. Phys. Rev. B. 63 (2001) 125408
20. Sinha S.K., Sirota E.B., and Garoff S. Phys. Rev. B 38 (1988) 2297
21. Sinha S.K. J. Phys. III Fr. 4 (1994) 1543
22. B Clark K., Bardwell J.A., and Baribeau J.M. J. Appl. Phys. 76 (1994) 3114
23. Dupeux M. Science des Matériaux ed (2004), Dunod p. 133
24. D.R. Lide (Ed.), CRC Hand Book Chemistry and Physics, 75th ed., 1994, p. 12.
25. Landheer D., Bardwell J.A., and Clark K.B. J. Electrochem. Soc. 141 (1994) 1309
26. Eymery J., Fournel F., Rieutord F., Buttard D., Moriceau H., and Aspar B. Appl. Phys. Lett. 75 (1999) 3509
27. Barber H.D., Lo H.B., and Jones J.E. J. Electrochem. Soc. 123 (1976) 1404