Band anticrossing in InGaPN alloys induced by N-related localized states

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Lin, K I ^a   Hwang, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; BAND STRUCTURE; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; ORDER DISORDER TRANSITIONS; SEMICONDUCTOR GROWTH; STRAIN MEASUREMENT;

ATOMIC ORDERING EFFECTS; BAND ANTICROSSING (BAC) MODEL; EPITAXIAL STRAIN; PHOTOREFLECTANCE;

INDIUM ALLOYS;

EID: 33750917318     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387972     Document Type: Article

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