Growth model of reversed taper during early stage of D.C. Etching on aluminum oriented to (100)

Electrochemistry

Volumn 74, Issue 9, 2006, Pages 737-743

  Ui, Koichi ^a   Yamasaki, Takashi ^a   Koura, Nobuyuki ^a   Idemoto, Yasushi ^a   Makino, Takeshi ^b   Furukawa, Masakazu ^b   Uchi, Hidenori ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b Nippon Chemi Con   (Japan)

Author keywords

Aluminum; Dc etching; Reversely tapered tunnel

Indexed keywords

COMPUTER SIMULATION; CORROSION; ETCHING; GROWTH (MATERIALS); INDUCTIVELY COUPLED PLASMA;

DC ETCHING; REVERSELY TAPERED TUNNELS; TUNNEL GROWTH;

ALUMINUM FOIL;

EID: 33750848804     PISSN: 13443542     EISSN: None     Source Type: Journal    
DOI: 10.5796/electrochemistry.74.737     Document Type: Article

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