Elastic properties of GaSe films epitaxially grown on the Si(111)1 × 1-H surface, studied by Brillouin scattering

Journal of Physics Condensed Matter

Volumn 11, Issue 35, 1999, Pages 6661-6668

  Panella, V ^a,b   Carlotti, G ^a   Socino, G ^a   Giovanninii, L ^a   Eddrief, M ^a   Sebenne, C ^a  

^a INFM   (Italy)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC DISPERSION; BRILLOUIN SCATTERING; CRYSTAL ORIENTATION; ELASTICITY; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SHEAR WAVES;

BRILLOUIN CROSS-SECTION;

SEMICONDUCTING FILMS;

EID: 0033361988     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/35/304     Document Type: Article

References (27)

1. See for example, Benedek G (ed) 1992 Surface Properties of Layered Structures (Dordrecht: Kluwer)
2. Adler C. Honke R, Pavone P and Schroeder U 1998 Phys. Rev. B 57 3726
3. Panella V, Glebov A, Toennies J P, Sébenne C, Eckl C. Adler C, Pavone P and Schroeder U Phys. Rev. B at press
4. Koma A and Yoshimura K 1986 Surf. Sci. 174 556
5. Saiki K, Ueno K, Shimida T and Koma A 1989 J Cryst. Growth 95 603
6. Ueno K, Shimida T, Saiki K and Koma A 1990 Appl. Phys. Lett. 56 327
7. Higashi G S, Chabal Y J, Trucks G W and Raghavari K 1990 Appl. Phys. Lett. 56 656
8. Ueno K, Abe H, Saiki K and Koma A 1991 Japan. J. Appl. Phys. 30 L1352
9. Reqqass H, Lacharme J-P, Sebénne C, Eddrief M and le Thanh V 1995 Surf. Sci. 3317333 464
10. Reqqass H, Lacharme J-P, Sebénne C, M.Eddrief M and le Thanh V 1996 Appl. Surf. Sci. 92 357
11. Reqqass H, Lacharme J-P, Sebénne C, Eddrief M, le Thanh V, Zheng Y L and Petroff J-F 1996 Appl. Surf. Sci. 104/105 557
12. Koebel A, Zheng Y, Petroff J F, Eddrief M, le Thanh V and Sébenne C 1995 J. Cryst. Growth 154 269
13. Faradev F E, Gasanly N M, Mavrin B N and Melnik N N 1978 Phys. Status Solidi b 85 381
14. Morhange J F, Jouanne M, Sacuto A, le Thanh Vinh, Eddrief M, Kanehisa M A, Ivanov I and Schwarcz R 1994 The Physics of Semiconductors (Proc. 22nd Int. Conf.) ed D J Lockwood (Singapore: World Scientific) p 297
15. Nizzoli F and Sandercock J R 1990 Dynamical Properties of Solids vol 6, ed G K Horton and A A Maradudin (Amsterdam: North-Holland) p 297
16. Chiang T C, Dumas J and Shen Y R 1978 Solid State Commun. 28 173
17. Catulle M, Fisher M and Chevy A 1983 Phys. Status Solidi b 119 327
18. Brusdeylins G, Rechsteiner R, Skofronick J G, Toennies J P, Benedek G and Miglio L 1986 Phys. Rev. B 34 902
19. Benedek G, Hofmann F, Ruggerone P, Onida G and Miglio L 1994 Surf. Sci. Rep. 20 1
20. Carlotti G, Fioretto D, Socino G, Verdini L and Pelosin V 1993 J. Appl. Phys. 73 3028
21. Fioretto D, Carlotti G, Socino G. Modesti S, Cepek C, Giovannini L, Donzelli O and Nizzoli F 1995 Phys. Rev. B 52 R8707
22. Press W H, Teukolsky S A, Vetterling W T and Flannery B P 1992 Numerical Recipes (Cambridge: Cambridge University Press)
23. Carlotti G, Fioretto D, Socino G, Hua Xia, An Hu and Jiang S S 1995 Mater. Res. Soc. Proc. 356 385-90
24. Panella V, Carlotti G, Socino G, Giovannini L, Eddrief M, Amimer K and Sébenne C 1997 J. Phys.: Condens. Matter 9 5575
25. Alieva L N, Blen'kii G L, Reshina 11, Salaev E Yu and Shteinshraiber V Ya 1979 Sov. Phys.-SolidState 21 90
26. Bortolani V, Marvin A M, Nizzoli F and Santoro G 1980 J Phys. C: Solid State Phys. 16 1757
27. The value of the dielectric constant of the film was directly measured by an ellipsometric method, while its value for the Si substrate is taken from Bortolani V, Nizzoli F, Santoro G, and Sandercock J R 1982 Phys. Rev. B 253442