Traps identification in Copper-Indium-Gallium-Sulfur-Selenide solar cells completed with various buffer layers by deep level transient spectroscopy

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2625-2631

  Kundu, Sambhu N ^a   Johnston, Steve ^b   Olsen, Larry C ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Copper indium gallium; Deep level transient spectroscopy defects; Sollar cells; Sulfur selenide

Indexed keywords

CHARGE CARRIERS; COPPER ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); SPECTROSCOPIC ANALYSIS;

CHEMICAL NATURE; DEEPER TRAP LEVELS; INTERFACE DEFECTS;

SOLAR CELLS;

EID: 33750812242     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.03.046     Document Type: Article

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