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Volumn 27, Issue 9, 2006, Pages 1578-1581

Preparation of AlSb polycrystalline thin films by co-evaporation

Author keywords

AlSb; Anneal; Polycrystalline thin films

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; EVAPORATION; LIGHT TRANSMISSION; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SOLAR CELLS; X RAY DIFFRACTION ANALYSIS;

EID: 33750585835     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (12)

References (7)
  • 1
    • 7244250585 scopus 로고    scopus 로고
    • Tianjin: Publishing House of Tianjin University, in Chinese
    • Lei Yongquan, Wan Qun, Shi Yongkang, et al. New energy materials. Tianjin: Publishing House of Tianjin University, 2000: 238 (in Chinese).
    • (2000) New Energy Materials , pp. 238
    • Lei, Y.1    Wan, Q.2    Shi, Y.3
  • 2
    • 0012309573 scopus 로고
    • Infrared absorption in n-type aluminum antimonide
    • Turner W J, Reese W E. Infrared absorption in n-type aluminum antimonide. Phys Rev, 1960, 117(4): 1003.
    • (1960) Phys Rev , vol.117 , Issue.4 , pp. 1003
    • Turner, W.J.1    Reese, W.E.2
  • 3
    • 0004411234 scopus 로고
    • Aluminum antimonide thin films by coevaporation of the elements
    • Johnson J E. Aluminum antimonide thin films by coevaporation of the elements. J Appl Phys, 1965, 36(10): 3193.
    • (1965) J Appl Phys , vol.36 , Issue.10 , pp. 3193
    • Johnson, J.E.1
  • 4
    • 0038628991 scopus 로고    scopus 로고
    • Effect of process conditions on mirostructural development during thermal evaporation of AlSb thin films
    • Lal K, Srivastava A K, Singh S, et al. Effect of process conditions on mirostructural development during thermal evaporation of AlSb thin films. Journal of Materials Science Letters, 2003, 22: 515.
    • (2003) Journal of Materials Science Letters , vol.22 , pp. 515
    • Lal, K.1    Srivastava, A.K.2    Singh, S.3
  • 5
    • 0031675502 scopus 로고    scopus 로고
    • Growth and proporties of aluminium antimonide films produced by hot wall epitaxy on single-crystal KCl
    • Singh T, Bedi R K. Growth and proporties of aluminium antimonide films produced by hot wall epitaxy on single-crystal KCl. Thin Solid Films, 1998, 312: 111.
    • (1998) Thin Solid Films , vol.312 , pp. 111
    • Singh, T.1    Bedi, R.K.2
  • 6
    • 33745180866 scopus 로고    scopus 로고
    • Growth of AlSb polycrystalline films by magnetron sputtering and annealing
    • in Chinese
    • Chen Weidong, Feng Lianghuan, Lei Zhi, et al. Growth of AlSb polycrystalline films by magnetron sputtering and annealing. Chinese Journal of Semiconductors, 2006, 27(3): 541 (in Chinese).
    • (2006) Chinese Journal of Semiconductors , vol.27 , Issue.3 , pp. 541
    • Chen, W.1    Feng, L.2    Lei, Z.3
  • 7
    • 0041800119 scopus 로고
    • Electrical and optical properties of intermetallic compounds III. Aluminum Antimonide
    • Blunt R F, Frederikse H P R. Electrical and optical properties of intermetallic compounds III. Aluminum Antimonide. Phys Rev, 1954: 578.
    • (1954) Phys Rev , pp. 578
    • Blunt, R.F.1    Frederikse, H.P.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.