Growth of AlSb polycrystalline films by magnetron sputtering and annealing

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 3, 2006, Pages 541-544

  Chen, Weidong ^a   Feng, Lianghuan ^a   Lei, Zhi ^a   Zhang, Jingquan ^a   Wu, Lili ^a   Cai, Wei ^a   Cai, Yaping ^a   Yao, Feifei ^a   Li, Wei ^a   Li, Bing ^a   Zheng, Jiagui ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

AlSb polycrystalline thin films; Annealing; Magnetron sputtering; Solar cell

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARGON; FABRICATION; GLASS; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; STRUCTURE (COMPOSITION); SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ALUMINIUM ANTIMONIDE POLYCRYSTALLINE FILMS; CONDUCTANCE ACTIVATION ENERGIES; DARK CONDUCTIVITY TEMPERATURE CURVES; PREFABRICATED FILMS;

THIN FILMS;

EID: 33745180866     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Yu K M, Moll A J, Chan N, et al. Substitutionality of Ge atoms in ion implanted AlSb. Appl Phys Lett, 1995, 66: 2406
2. Fonash S J. Solar cell device physics. New York: Academic Press, 1981: 129
3. Zhao Fuxin, Wei Yanzhang. Solar cell and its application. Beijing: National Defence Industry Press, 1985: 85 (in Chinese)
4. Lal K, Srivastava A K, Singh S, et al. Effect of process conditions on microstructural development during thermal evaporation of AlSb thin films. J Mater Sci Lett, 2003, 22: 515
5. Dasilva F W O, Raisin C, Nonaouara M, et al. Auger and electron energy loss spectroscopies study of the oxidation of AlSb(001) thin films grown by molecular beam epitaxy. Thin Solid Films, 1991, 200: 33
6. Baufay L, Pigeolet A, Laude L D. Possibility of self-epitaxal growth of laser irradiated AlSb films. J Appl Phys, 1983, 54(2): 660
7. Singh T, Bedi R D. Growth and properties of aluminium antimonide films produced by hot wall epitaxy on single-crystal KCl. Thin Solid Films, 1998, 312: 111
8. Francombe M H, Noreika A J, Zeitman S A, et al. Growth and properties of vacuum-deposited films of AlSb, AlAs and AlP. Thin Solid Films, 1976, 32: 259
9. Cao Xin, Luo Jinsheng, Chen Tangsheng, et al. Study of d.c. reactive sputtering deposition AlN films used fo GaAs MESFET passivation. Chinese Journal of Semiconductors, 1999, 20(8): 644 (inChinese)
10. Johnson J E. Aluminium antimonide thin films by coevaporation of the elements. J Appl Phys, 1965, 36: 3193