Design consideration for 2 kV SiC-SIT

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 179-182

  Onose, H ^a   Yatsuo, T ^a   Watanabe, A ^a   Yokota, T ^a   Ishikawa, T ^a   Sanpei, I ^a   Someya, T ^a   Kobayashi, Y ^a  

^a HITACHI LTD   (Japan)

Author keywords

Device structure; High voltage; Ion implantation; JFET; SiC; SIT; Specific on resistance

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; SILICON CARBIDE;

STATIC INDUCTION TRANSISTORS (SIT);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0034829393     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)