Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces

Surface Science

Volumn 600, Issue 21, 2006, Pages 4878-4882

  Teys, S A ^a   Romanyuk, K N ^a   Zhachuk, R A ^a   Olshanetsky, B Z ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Low energy electron diffraction (LEED); Scanning tunneling microscopy; Silicon; Step formation and bunching; Stepped single crystal surfaces; Triple layer height steps

Indexed keywords

CRYSTAL ORIENTATION; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

STEP FORMATION AND BUNCHING; STEPPED SINGLE CRYSTAL SURFACES; TRIPLE-LAYER-HEIGHT STEPS;

SURFACE STRUCTURE;

EID: 33750489756     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.08.009     Document Type: Article

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