Numerical modeling of stress build up during nickel silicidation under anisothermal annealing

Materials Science and Engineering: B

Volumn 135, Issue 2, 2006, Pages 95-102

  Cacho, Florian ^a,c   Cailletaud, Georges ^a   Rivero, Christian ^b   Gergaud, Patrice ^b   Thomas, Olivier ^b   Jaouen, Herve ^c  

^a CENTRE DES MATÉRIAUX   (France)

^b CNRS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Nickel; Silicide; Thin films

Indexed keywords

ANNEALING; COMPRESSIVE STRENGTH; COMPUTER SIMULATION; CRYSTALS; NICKEL COMPOUNDS; SILICON; THERMAL EXPANSION;

ANISOTHERMAL ANNEALING; NICKEL SILICIDATION; PHASE CHANGE CHARACTERISTICS;

THIN FILMS;

EID: 33750450049     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.08.044     Document Type: Article

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