Residue-free nanofilling with wetting solutions

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Kim, Tae Il ^a   Kwon, S Joon ^a,b   Lee, Jiyeon ^a   Lee, Hong H ^a  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANGLE; LIQUIDS; SOL-GELS; SOLUTIONS; SURFACE PROPERTIES; WETTING;

LIQUID FILAMENTS; NANOCHANNELS; NANOFILLING;

NANOSTRUCTURED MATERIALS;

EID: 33750430268     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364845     Document Type: Article

References (19)

1. D. W. Inglis, R. Riehn, R. H. Austin, and J. C. Sturm, Appl. Phys. Lett. 85, 5093 (2003).
2. D. G. Bucknall, Nanolithography and Patterning Techniques in Microeletronics (Woodhead, Cambridge, 2005), p. 299.
3. S. Penka, W. Robl, R. Strenz, and P. Baumgatner, Proceedings of the 1998 International Interconnect Technology Conference (IEEE, San Francisco, 1998), p. 271.
4. J. Heo, S. Hong, G. Yon, Y. Shin, K. Fujihara, U. Chung, and J. Moon, Proceedings of 2003 Symposium on VLSI Technology (IEEE, Kyoto, 2003), p. 155.
5. G. Maltezos, R. Nortrup, S. Jeon, J. Zaumseil, and J. A. Rogers, Appl. Phys. Lett. 83, 2067 (2003).
6. R. D. Piner, J. Zhu, F. Xu, S. Hong, and C. A. Mirkin, Science 283, 661 (1999).
7. A. Sharma and G. Reiter, J. Colloid Interface Sci. 178, 383 (1996).
8. R. Xie, A. Karim, J. F. Douglas, C. C. Han, and R. A. Weiss, Phys. Rev. Lett. 81, 1251 (1998).
9. G. Reiter, Phys. Rev. Lett. 68, 75 (1992).
10. R. J. Jackman, D. C. Duffy, E. Ostuni, N. D. Willmore, and G. M. Whitesides, Anal. Chem. 70, 2280 (1998).
11. R. Seemann, E. J. Kramer, and F. F. Lange, New J. Phys. 6, 111 (2004).
12. R. Seemann, M. Brinkmann, E. J. Kramer, F. F. Lange, and R. Lipowsky, Proc. Natl. Acad. Sci. U.S.A. 102, 1848 (2005).
13. S. H. Kim, H. Hiroshima, S. Inoue, Y. Kurashima, and M. Kmuro, J. Vac. Sci. Technol. B 21, 6 (2003).
14. P. Concus and R. Finn, Proc. Natl. Acad. Sci. U.S.A. 63, 292 (1969).
15. K. Y. Suh, Y. S. Kim, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(200109)13:18<1386::AID-ADMA1386 3.0.CO;2-X 13, 1386 (2001); H. Yoon, T. Kim, S. Choi, K. Y. Suh, M. J. Kim, and H. H. Lee, Appl. Phys. Lett. 88, 254104 (2006).
16. K. Y. Suh, Y. S. Kim, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(200109)13:18<1386::AID-ADMA1386 3.0.CO;2-X 13, 1386 (2001); H. Yoon, T. Kim, S. Choi, K. Y. Suh, M. J. Kim, and H. H. Lee, Appl. Phys. Lett. 88, 254104 (2006).
17. S. J. Choi, P. J. Yoo, S. J. Beak, T. W. Kim, and H. H. Lee, J. Am. Chem. Soc. 126, 7744 (2004).
18. A. W. Adamson and A. P. Gast, Physical Chemistry of Surfaces, 6th ed. (Wiley, New York, 1997), Chap., p. 105.
19. A. Martin, O. Rossier, A. Buguin, P. Auroy, and F. Brochard-Wyart, Eur. Phys. J. E 3, 337 (2000).