Nanoscale thermal phenomena in tunnel junctions for spintronics applications

Journal of Electronic Packaging

Volumn 128, Issue 2, 2006, Pages 109-114

  Ju, Yongho Sungtaek ^a  

^a Department of Civil and Environmental Engineering   (United States)

Author keywords

Magnetic random access memory (MRAM); Magnetoresistive sensors; Spintronics; Thermal interface resistance; Tunnel junction

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRONIC EQUIPMENT; HEAT RESISTANCE; MAGNETORESISTANCE; NANOTECHNOLOGY; THERMOANALYSIS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETORESISTIVE SENSORS; SPINTRONICS APPLICATIONS; THERMAL INTERFACE RESISTANCE;

TUNNEL JUNCTIONS;

EID: 33750427794     PISSN: 10437398     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.2165215     Document Type: Article

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