Thermal variations in switching fields for sub-micron MRAM cells

IEEE Transactions on Magnetics

Volumn 37, Issue 4 I, 2001, Pages 1970-1972

  Bhattacharyya, M ^a   Anthony, T ^a   Nickel, J ^a   Sharma, M ^a   Tran, L ^a   Walmsley, R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

MRAM; Stability factor; Switching field jitter; Tunnel junctions

Indexed keywords

JITTER; MAGNETIC STORAGE; SWITCHING; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACESS MEMORY (MRAM);

RANDOM ACCESS STORAGE;

EID: 0035385999     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.951024     Document Type: Article

References (9)

1. Spin-polarized tunnelling, magnetoresistance and interfacial effects in ferromagnetic junctions
2. Thermal effect limits in ultra-high-density magnetic recording
3. Thermally assisted magnetization reversal in submicron-sized magnetic thin films
4. Spin-valve thermal stability: The effect of different antiferromagnetis
5. Magnetization reversal in micron-sized magnetic thin films
6. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions
7. Finite-size scaling behaviour of ferromagnetic thin films
8. Compositional and temperature dependence of basic magnetic properties of CoCr-alloy thin films