메뉴 건너뛰기




Volumn 568, Issue 1, 2006, Pages 153-158

Full-size monolithic active pixel sensors in SOI technology-Design considerations, simulations and measurements results

Author keywords

Monolithic active pixel sensors; Silicon detectors; Silicon on insulator technology

Indexed keywords

COMPUTER SIMULATION; LOGIC DESIGN; RADIATION DETECTORS; SILICON ON INSULATOR TECHNOLOGY; SILICON SENSORS;

EID: 33750326803     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.224     Document Type: Article
Times cited : (13)

References (9)
  • 3
    • 33750367592 scopus 로고    scopus 로고
    • 〈http://www.synopsys.com/products/tcad/tcad.html〉
  • 5
    • 33750374815 scopus 로고    scopus 로고
    • H. Niemiec, W. Kucewicz, Proceedings of International Conference on Signals and Electronic Systems, ICSES 2004, Poznan, Poland, 2004, pp. 469-472.
  • 7
    • 33750303644 scopus 로고    scopus 로고
    • IceMOS Technology SOI solutions, 〈http://www.icemostech.com/Product_Briefs/SOIDatasheet.pdf〉
  • 8
    • 33750354619 scopus 로고    scopus 로고
    • F.X. Pengg, Monolithic silicon pixel detectors in SOI technology, Ph.D. Dissertation, Linz University, Linz 1996.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.