Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 131-136

  Coletti, Camilla ^a   Hetzel, Martin ^b   Virojanadara, Chariya ^b   Starke, Ulrich ^b   Saddow, Stephen E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SURFACES;

ATOMIC TERRACES; HYDROGEN ETCHING; SINGLE-CRYSTAL EPILAYERS;

SILICON CARBIDE;

EID: 33750300478     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b08-02     Document Type: Conference Paper

References (6)

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2. U. Starke: "Atomic structure of SiC surfaces", in Silicon Carbide, Recent Major Advances (eds: W.J. Choyke, H. Matsunami, and G. Pensl, Springer, 2004), p. 281.
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