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Volumn 49, Issue 2, 2006, Pages 107-114

Design of low noise charge amplifier in sub-micron technology for fast shaping time

Author keywords

Charge amplifier; Moderate inversion; Noise

Indexed keywords

CHARGE SENSITIVE AMPLIFIER (CSA); MODERATE INVERSION; OPTIMIZATION; TRANSISTOR GATE LENGTH;

EID: 33750028031     PISSN: 09251030     EISSN: 15731979     Source Type: Journal    
DOI: 10.1007/s10470-006-9292-1     Document Type: Conference Paper
Times cited : (11)

References (12)
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  • 2
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  • 5
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    • Effect of 1/f noise on resolution of CMOS analog readout systems for microstrip and pixel detectors
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    • Nygard, E.1
  • 8
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    • An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
    • C. Enz, F. Krummenacher, and E. Vitoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications." Analog Integrated Circuits and Signal Processing, vol. 8, pp. 83-114, 1995.
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.