Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Tsormpatzoglou, A ^a   Tassis, D H ^a   Dimitriadis, C A ^a   Dozsa L ^b   Galkin, N G ^c   Goroshko, D L ^c   Polyarnyi, V O ^c   Chusovitin, E A ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED ARRAYS; LOW FREQUENCY NOISE MEASUREMENTS; NANOCRYSTALLITES; SILICON SCHOTTKY JUNCTIONS; SPACE CHARGE LIMITED CURRENTS (SCLC);

DEEP LEVEL TRANSIENT SPECTROSCOPY; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; IRON COMPOUNDS; NATURAL FREQUENCIES; PARAMETER ESTIMATION; SILICON COMPOUNDS;

NANOSTRUCTURED MATERIALS;

EID: 33750026420     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357642     Document Type: Article

References (19)

1. M. C. Bost and J. E. Mahan, J. Appl. Phys. 64, 2034 (1988).
2. C. A. Dimitriadis, J. H. Werner, S. Logothetidis, M. Stutzmann, J. Weber, and R. Nesper, J. Appl. Phys. 68, 1726 (1990).
3. R. I. Batalov, R. M. Bayazitov, I. B. Khaibullin, E. I. Terukov, and V. Kh. Kudoyarove, Nanotechnology 12, 409 (2001).
4. Q. Wan, T. H. Wang, and C. L. Lin, Appl. Phys. Lett. 82, 3224 (2003).
5. K. Lefki, P. Muret, N. Cherief, and C. Cinti, J. Appl. Phys. 69, 352 (1991).
6. L. Regolini, F. Trincat, I. Berbezier, and Y. Shapira, Appl. Phys. Lett. 60, 956 (1992).
7. T. Miki, Y. Matsui, K. Matsubara, and K. Kishimito, J. Appl. Phys. 75, 1693 (1994).
8. E. Arushanov, E. Bucher, C. Klock, O. Kulikova, L. Kulyuk, and A. Siminel, Phys. Rev. B 52, 20 (1995).
9. K. Herz and M. Powalla, Appl. Surf. Sci. 91, 87 (1995).
10. D. H. Tassis, C. A. Dimitriadis, and O. Valassiades, J. Appl. Phys. 84, 2960 (1998).
11. D. H. Tassis, D. Evangelinos, O. Valassiades, and C. A. Dimitriadis, J. Appl. Phys. 96, 6504 (2004).
12. D. N. Leong, M. A. Harris, K. J. Reeson, and K. P. Homewood, Nature (London) 387, 163 (1997).
13. C. Li, T. Suemasu, and F. Hasegawa, J. Appl. Phys. 97, 043529 (2005).
14. B. O. Kolbesen and H. Cerva, Phys. Status Solidi B 222, 303 (2000).
15. N. G. Galkin, SEMINANO2005, First International Workshop on Semicondcutor Nanocrystals, Budapest, Hungary, 2005, p. 31.
16. N. G. Galkin, V. A. Ivanov, A. V. Konchenko, and D. L. Goroshko, Instrum. Exp. Tech. 42, 284 (1999).
17. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
18. A. Tsormpatzoglou, Appl. Phys. Lett. 87, 163109 (2005).
19. A. Carbone, B. K. Kotowska, and D. Kotowski, Phys. Rev. Lett. 95, 236601 (2005).