GaAs based semiconductor quantum dot saturable absorber mirror grown by molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6343 II, Issue , 2006, Pages

  Zhang, Z Y ^a   Scurtescu, C ^a   Taschuk, M T ^a   Tsui, Y Y ^a   Fedosejevs, R ^a   Blumin, M ^b   Saveliev, I ^b   Yang, S ^b   Ruda, H E ^b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

Distributed Brag Reflector (DBR); Molecular Beam Epitaxy (MBE); Quantum dot; Semiconductor saturable absorber mirror

Indexed keywords

DISTRIBUTED BRAG REFLECTOR (DBR); REFLECTIVITY SPECTRUM; SEMICONDUCTOR SATURABLE ABSORBER MIRROR;

LASER MODE LOCKING; MOLECULAR BEAM EPITAXY; REFLECTION; SEMICONDUCTOR QUANTUM DOTS; SOLID STATE LASERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33749822018     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.707736     Document Type: Conference Paper

References (6)

1. Mukai, K.; Nakata, Y.; Otsubo, K.; Sugawara, M.; Yokoyama, N.; Ishikawa, H, "1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA", IEEE Photon. Techn. Lett. 10, 1205 (1999)
2. H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M S. Skolnick, K. M. Groom, M. Gutiérrez, M. Hopkinson, J. S. Ng, J. P. R. David and R. Beanland, "Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer" Appl. Phys. Lett. 85, 704 (2004)
3. L. Zhang, T. F. Boggess, D.G. Deppe, D.L. Huffaker, O.B. Shchekin and C. Cao "dynamic response of 1.3μm wavelength InGaAs/GaAs quantum dots", Appl. Phys. Lett. 76, 1222 (2000)
4. E. U. Rafailov, S. J. White, A. A. Lagatsky, A. Miller, W. Sibbett, D. A. Livshits, A. E.Zhukov, and V. M. Ustinov, "Fast Quantum-Dot Saturable Absorber for Passive Mode-Locking of Solid-State Lasers", IEEE Photon. Techn. Lett 16, 11 (2004)
5. R. Herda, O. G. Okhotnikov, E. U. Rafailov, W. Sibbett, P. Crittenden and A. Starodumov, "Semiconductor Quantum-Dot Saturable Absorber Mode-Locked Fiber Laser", IEEE Phot. Techn. Lett 18, 1 (2006)
6. 4 laser at 1342nm. Optics letter Vol.30,12,1482 (2005)