High-reliability and low-dark-current 10-Gb/s planar superlattice avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 9, Issue 12, 1997, Pages 1619-1621

  Watanabe, I ^a   Nakata, T ^a   Tsuji, M ^a   Makita, K ^a   Taguchi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

10 Gb s; Avalanche photodiode; Dark current; Guardring; Optical receiver; Planar structure; Reliability; Superlattice

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; QUANTUM EFFICIENCY; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS;

DARK CURRENTS; PLANAR SUPERLATTICE AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0031361638     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.643288     Document Type: Article

References (11)

1. H. Ishikawa, I. Watanabe, T. Suzaki, M. Tsuji, S. Sugou, K. Makita, and K. Taguchi, "High-sensitivity 10 Gb/s optical receiver with superlattice APD." Electron. Lett., vol. 29, pp. 1874-1875, 1993.
2. Y. Miyamoto, K. Hagimoto, M. Ohhata, T. Kagawa, N. Tsuzuki, H. Tsunetsugu, and I. Nishi, "10 Gb/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET IC's," J. Lightwave Technol., vol. 12, pp. 332-341, 1994.
3. L. D. Tzeng, O, Mizuhara, T. V. Nguyen, K. Ogawa, I. Watanabe, K. Makita, M. Tsuji, and K. Taguchi, "A high sensitivity APD receiver for 10 Gb/s system applications," IEEE Photon. Technol. Lett., vol. 8, pp. 1229-1231, 1996.
4. T. Y. Yun, M. S. Park, J. H. Han, I. Watanabe, and K. Makita, "10-Gigabil-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver," IEEE Photon. Technol. Lett., vol. 8, pp. 1232-1234, 1996.
5. T. Kagawa, Y. Kawamura, and H. Iwanuma, "InGaAsP-InAlAs superlattice avalanche photodiode," IEEE J. Quantum Electron., vol. 28, pp. 1419-1423, 1992.
6. I. Watanabe, S. Sugou, H. Ishikawa, T. Anan, K. Makita, M. Tsuji, and K. Taguchi, "High-speed and low-dark current InAlAs-InAlGaAs quaternary well superlattice APD's with 120 GHz gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 5, pp. 675-677, 1993.
7. I. Watanabe, M. Tsuji, K. Makita, and K. Taguchi, "Gain-bandwidth product analysis of InAlGaAs-InAlAs superlattice avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 8, pp. 269-271, 1996.
8. I. Watanabe, M. Tsuji, M. Hayashi, K. Makita, and K. Taguchi, "Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 8, pp. 824-826, 1996.
9. I. Watanabe, M. Tsuji, K. Makita, and K. Taguchi, "A new planarstructure InAlGaAs-InAlAs superlattice avalanche photodiode with a Ti-implanted guard-ring," IEEE Photon. Technol. Lett., vol. 8, pp. 827-829, 1996.
10. I. Watanabe, M. Tsuji, M. Hayashi, K. Makita, and K. Taguchi, "Design and performance of InAlGaAs-InAlAs superlattice avalanche photodiodes," J. Lightwave Technol., vol. 15, pp. 1012-1019, June 1997
11. B. L. Kaspar and J. Campbell, "Multigigabit-per second avalanche photodiode lightwave receivers," J. Lightwave Technol., vol. LT-5, pp. 1352-1364, 1987.