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Volumn 24, Issue 5, 2006, Pages 2291-2294

Nanoscale structure fabrication of multiple AlGaSb/InGaSb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; OPTICAL DEVICES; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33749359448     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348727     Document Type: Article
Times cited : (6)

References (21)
  • 17
    • 33749365522 scopus 로고    scopus 로고
    • note
    • 75% of the PL intensity was expected, because the square pattern filled 25% per unit pattern.
  • 18
    • 33749359644 scopus 로고    scopus 로고
    • note
    • sq, are the nonradiative area, the nonradiative length from the etching sidewall, and the square lattice constant, respectively.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.