Investigation of stress-induced defects in shallow trench isolation by cathodoluminescence and Raman spectroscopies

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Sugie, R ^a   Matsuda, K ^a   Ajioka, T ^a   Yoshikawa, M ^a   Mizukoshi, T ^b   Shibusawa, K ^b   Yo, S ^c  

^a TORAY RESEARCH CENTER INC   (Japan)

^b Miyagi Oki Electric Co Ltd   (Japan)

^c OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; OXIDATION; RAMAN SPECTROSCOPY; SILICON WAFERS;

MEMORY CELLS; RAMAN MICROPROBE MEASUREMENTS; SHALLOW TRENCH ISOLATION (STI); STRESS DISTRIBUTIONS;

DISLOCATIONS (CRYSTALS);

EID: 33749343861     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345459     Document Type: Article

References (16)

1. A. Steegen, A. Lauwers, M. de Potter, G. Badenes, R. Rooyackers, and K. Maex, 2000 Symposium on VLSI Technology Digest (IEEE, Honolulu, HI, 2000), 180.
2. J. Damiano et al., 1998 Symposium on VLSI Technology Digest (IEEE, Honolulu, HI, 1998), 212.
3. M. H. Park et al. Tech. Dig. - Int. Electron Devices Meet. 1997, 669.
4. B. G. Yacobi and D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids, (Plenim Press, New York, 1990).
5. R. Sauer, J. Weber, J. Stolz, E. R. Weber, K. H. Kusters, and H. Alexander, Appl. Phys. A 36, 1 (1985).
6. S. Kambayashi, T. Hamasaki, T. Nakakubo, M. Watanabe, and H. Tango, Extended Abstracts of the 18th Conference on Solid State Devices and Materials, Tokyo, 1986, p. 415.
7. K. Kobayashi, Y. Inoue, T. Nishimura, T. Nishioka, H. Arima, M. Hirayama, and T. Matsukawa, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, p. 323.
8. I. De Wolf, J. Vanhellemont, A. Romano-Rodriguez, H. Norström, and H. E. Maes, J. Appl. Phys. 71, 898 (1992).
9. M. Yoshikawa, M. Maegawa, G. Katagiri, and H. Ishida, J. Appl. Phys. 78, 941 (1995).
10. I. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 79, 7148 (1996).
11. K. Kanaya and S. Okayama, J. Phys. D 5, 43 (1972).
12. T. Mizukoshi, K. Shibusawa, S. Yo, R. Sugie, and T. Ajioka, IEEE Trans. Semicond. Manuf. 18, 546 (2005).
13. K. Nikawa, C. Matsumoto, and S. Inoue, Jpn. J. Appl. Phys., Part 1 34, 2260 (1995).
14. K. Thonke, H. Klemisch, J. Weber, and R. Sauer, Phys. Rev. B 24, 5874 (1981).
15. V. V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B 51, 10520 (1995).
16. S. Pizzini, M. Acciarri, E. Leoni, and A. Le Donne, Phys. Status Solidi B 222, 141 (2000).