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1
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17644447585
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Substrate transfer: Enabling technology for RF applications
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Dec.
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R. Dekker, K. Dessein, J.-H. Fock, A. Gakis, C. Jonville, O. M. Kuijken, T. M. Michielsen, P. Mijlemans, H. Pohlmann, W. Schnitt, C. E. Timmering, and A. M. H. Tombeur, "Substrate transfer: enabling technology for RF applications," Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 371-374, Dec. 2003.
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Dekker, R.1
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Gakis, A.4
Jonville, C.5
Kuijken, O.M.6
Michielsen, T.M.7
Mijlemans, P.8
Pohlmann, H.9
Schnitt, W.10
Timmering, C.E.11
Tombeur, A.M.H.12
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2
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4544352558
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A CPU on a plastic film substrate
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June
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T. Takayama, Y. Ohno, Y. Goto, A. Machida, M. Fujita, J. Maruyama, K. Kato, J. Koyama, and S. Yamazaki, "A CPU on a plastic film substrate, " Symp. on VLSI Tech., pp. 230-231, June 2004.
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Symp. on VLSI Tech.
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Takayama, T.1
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Fujita, M.5
Maruyama, J.6
Kato, K.7
Koyama, J.8
Yamazaki, S.9
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3
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4544363342
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Narrow-band band-pass filters on silicon substrates at 30 GHz
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June
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D. S. Yu, K. T. Chan, A. Chin, S. P. McAlister, C. Zhu, M. F. Li, and Dim-Lee Kwong, "Narrow-band band-pass filters on silicon substrates at 30 GHz," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1467-1470, June 2004.
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IEEE MTT-S Int. Microwave Symp. Dig.
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Yu, D.S.1
Chan, K.T.2
Chin, A.3
McAlister, S.P.4
Zhu, C.5
Li, M.F.6
Kwong, D.-L.7
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4
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17644447214
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RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Dec.
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A. Chin, K. T. Chan, H. C. Huang, C. Chen, V. Liang, J. K. Chen, S. C. Chien, S. W. Sun, D. S. Duh, W. J. Lin, C. Zhu, M.-F. Li, S. P. McAlister and D. L. Kwong, "RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation," Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 375-378, Dec. 2003.
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Chin, A.1
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Chen, J.K.6
Chien, S.C.7
Sun, S.W.8
Duh, D.S.9
Lin, W.J.10
Zhu, C.11
Li, M.-F.12
McAlister, S.P.13
Kwong, D.L.14
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5
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0042092341
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Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
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June
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K. T. Chan, A. Chin, S. P. McAlister, C. Y. Chang, V. Liang, J. K. Chen, S. C. Chien, D. S. Duh, and W. J. Lin, "Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process," IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 963-966, June 2003.
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Chan, K.T.1
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Chang, C.Y.4
Liang, V.5
Chen, J.K.6
Chien, S.C.7
Duh, D.S.8
Lin, W.J.9
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6
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0035716971
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Integrated antennas on Si, proton-implanted Si and Si-on-Quartz
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Dec.
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K. T. Chan, A. Chin, Y. B. Chen, Y.-D. Lin, D. T. S. Duh, and W. J. Lin, "Integrated antennas on Si, proton-implanted Si and Si-on-Quartz," Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 903-906, Dec. 2001.
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Chan, K.T.1
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Lin, Y.-D.4
Duh, D.T.S.5
Lin, W.J.6
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7
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0035683105
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Transmission line noise from standard and proton-implanted Si
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June
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K. T. Chan, A. Chin, C. M. Kwei, D. T. Shien, and W. J. Lin "Transmission line noise from standard and proton-implanted Si," IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 763-766, June 2001.
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Chan, K.T.1
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Kwei, C.M.3
Shien, D.T.4
Lin, W.J.5
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8
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0033708950
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RF loss and cross talk on extremely high resistivity (10K-lM̄-cm) Si fabricated by ion implantation
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June
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Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, S. C. Pai, C. C. Chi, and C. P. Liao, "RF loss and cross talk on extremely high resistivity (10K-lM̄-cm) Si fabricated by ion implantation," IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 221-224, June 2000.
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9
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0036045163
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Improvement of high resistivity substrate for future mixed analog-digital application
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June
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T. Ohguro, K. Kojima, H. S. Momose, S. Nitta, T. Fukuda, T. Enda, and Y. Toyoshima, "Improvement of high resistivity substrate for future mixed analog-digital application," Symp. On VLSI Tech. Dig., pp. 158-159, June 2002.
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Enda, T.6
Toyoshima, Y.7
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10
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0031634749
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Low loss micromachined elliptic filters for millimeter wave telecommunication systems
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June
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P. Blondy, A.R. Brown, D. Cros, G. M. Rebeiz, "Low loss micromachined elliptic filters for millimeter wave telecommunication systems," IEEE MTT-S Int. Microwave Symp., pp. 1181-1184, June 1998.
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IEEE MTT-S Int. Microwave Symp.
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Blondy, P.1
Brown, A.R.2
Cros, D.3
Rebeiz, G.M.4
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11
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0031645672
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Micromechanical electrostatic K-band switches
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June
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S. Pacheco, C. T.-C. Nguyen, and L. P. B. Katehi, "Micromechanical electrostatic K-band switches," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1569-1572, June 1998.
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12
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0043095381
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Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors
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June
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E.-C. Park, S.-H. Baek, T.-S. Song, J.-B. Yoon, and E. Yoon, "Performance Comparison of 5GHz VCOs Integrated by CMOS Compatible High Q MEMS Inductors," IEEE MTT-S Int. Microwave Symp., pp. 721-724, June 2003.
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IEEE MTT-S Int. Microwave Symp.
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Park, E.-C.1
Baek, S.-H.2
Song, T.-S.3
Yoon, J.-B.4
Yoon, E.5
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13
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4444250838
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Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length
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June
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M.C. King, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Y. Chang and Albert Chin, "Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length," IEEE RF IC Symp. Dig., pp. 171-174, June 2004.
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IEEE RF IC Symp. Dig.
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King, M.C.1
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Huang, C.M.6
Chang, Y.7
Chin, A.8
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14
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4444353298
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RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes
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June
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M. C. King, M. T. Yang, C. W. Kuo, Y. Chang, and A. Chin, "RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes," IEEE MTT-S Int'l Microwave Symp. Dig., vol. 1, pp. 6-11, June 2004.
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IEEE MTT-S Int'l Microwave Symp. Dig.
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King, M.C.1
Yang, M.T.2
Kuo, C.W.3
Chang, Y.4
Chin, A.5
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15
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84948678142
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Performance-augmented CMOS using back-end uniaxial strain
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June
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R. E. Belford, W. Zhao, J. Potashnik, Q. Liu, and A. Seabaugh, Performance-augmented CMOS using back-end uniaxial strain," Device Research Conference (DRC) Dig., pp. 41-42, June 2002.
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Device Research Conference (DRC) Dig.
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Belford, R.E.1
Zhao, W.2
Potashnik, J.3
Liu, Q.4
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