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Volumn 2005, Issue , 2005, Pages 1371-1374

A V-band eight-way combined solid-state power amplifier with 12.8 watt output power

Author keywords

MMIC; PHEMT; Solid state power amplifier; Traveling waveguide tube amplifier; V band

Indexed keywords

PHEMT; SOLID-STATE POWER AMPLIFIERS; TRAVELING WAVEGUIDE TUBE AMPLIFIERS; V-BAND;

EID: 33749250774     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516938     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 3
    • 0029533607 scopus 로고
    • 0.15 μm InGaAs/AlGaAs/GaAs HEMT production process for high performance & high yield V-band power MMICs
    • R. Lai et al.,"0.15 μm InGaAs/AlGaAs/GaAs HEMT Production Process for High Performance & High Yield V-band Power MMICs", the Technical Digest of IEEE GaAs IC Symposium, 1995, pp. 105-107.
    • (1995) Technical Digest of IEEE GaAs IC Symposium , pp. 105-107
    • Lai, R.1
  • 4
    • 0029232125 scopus 로고
    • 94 GHz power amplifier using PHEMT technology
    • L. Marosi et al., "94 GHz Power Amplifier Using PHEMT Technology", the Technical Digest of IEEE MTT Symposium, 1995, pp. 1597-1600.
    • (1995) Technical Digest of IEEE MTT Symposium , pp. 1597-1600
    • Marosi, L.1
  • 6
    • 33747448999 scopus 로고
    • A 0.1 W W-band pseudomorphic HEMT MMIC power amplifier
    • T. H. Chen et al., "A 0.1 W W-band Pseudomorphic HEMT MMIC Power Amplifier", the Technical Digest of IEEE GaAs IC Symposium, 1992, pp. 71-74
    • (1992) Technical Digest of IEEE GaAs IC Symposium , pp. 71-74
    • Chen, T.H.1
  • 7
    • 0026138241 scopus 로고
    • High gain W-band pseudomorphic InGaAs power HEMTs
    • D. C. Streit et al., "High Gain W-band Pseudomorphic InGaAs Power HEMTs", IEEE Electron Device Lett., Vol. 12, 1991, pp. 149-150.
    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 149-150
    • Streit, D.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.