A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1069-1072

  Kim, Jin Soak ^a   Kim, Eun Kyu ^a   Han, Il Ki ^b   Song, Jin Dong ^b   Lee, Jung Il ^b   Lee, Sejoon ^c   Shon, Yoon ^c   Kim, D Y ^c  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

DEEP-LEVEL TRANSIENT SPECTROSCOPY; DEFECT STATES; QUANTUM CASCADE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33749063841     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/015     Document Type: Article

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