Growth and characterization of InGaAs/InAlAs quantum cascade lasers

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1831-1835

  Liu, Feng Qi ^a   Zhang, Quan Sheng ^a   Zhang, Yong Zhao ^a   Ding, Ding ^a   Xu, Bo ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Molecular beam epitaxy; Quantum cascade laser

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTRIC POWER GENERATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

QUANTUM CASCADE (QC) LASERS;

SEMICONDUCTOR LASERS;

EID: 0035477982     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00172-1     Document Type: Article

References (13)

1. Quantum cascade laser
2. High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature
3. Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser
4. High-power interminiband lasing in intrinsic superlattices
5. High-power λ∼8 μm quantum cascade lasers with near optimum performance
6. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
7. Long wavelength superlattice quantum cascade lasers at λ≅17 μm
8. High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 μm
9. High-temperature (T≥425 K) pulsed operation of quantum cascade lasers
10. Large electrically induced transmission changes of GaAs/AlGaAs quantum-cascade structures
11. Strained InGaAs/AlGaAs/GaAs - Quantum cascade lasers
12. Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells
13. 0.48As grown by modulated arsenic moleular beam epitaxy