Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding

Electronics Letters

Volumn 38, Issue 24, 2002, Pages 1539-1541

  Green, R P ^a   Wilson, L R ^a   Carder, D A ^a   Cockburn, J W ^a   Hopkinson, M ^a   Steer, M J ^a   Airey, R J ^a   Hill, G ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

GALLIUM INDIUM PHOSPHIDE WAVEGUIDE; LATTICE MATCHING; QUANTUM CASCADE LASER; THERMALLY ACTIVATED CARRIER LEAKAGE; THRESHOLD CURRENT DENSITY; VALVED CRACKER SOURCE;

QUANTUM WELL LASERS;

EID: 0037153506     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20021080     Document Type: Article

References (9)

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