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Volumn 252, Issue 24, 2006, Pages 8471-8475

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

(5) Simoes A Z a Ramirez M A a Stojanovic, B D a Longo, E a Varela, J A a

a SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

Author keywords

Atomic force microscopy; Dielectric properties; Fatigue; Thin films

Indexed keywords

ANNEALING; CRYSTALLIZATION; FERROELECTRICITY; FURNACES; LANTHANUM; MICROWAVE OVENS; SEMICONDUCTOR DOPING; SILICON; THIN FILMS;

BISMUTH TITANATE FILMS; MICROWAVE ANNEALING; POLYMERIC PRECURSOR METHOD;

BISMUTH COMPOUNDS;

EID: 33748979301 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.11.055 Document Type: Article

Times cited : (8)

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