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Volumn 97, Issue , 2005, Pages 99-116

Enhanced generation of terahertz radiation from semiconductor surfaces with external magnetic field

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EID: 33748859845     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/10828028_4     Document Type: Article
Times cited : (1)

References (35)
  • 4
    • 0000837346 scopus 로고    scopus 로고
    • N. Sarukura, H. Ohtake, S. Izumida, Z. Liu: J. Appl. Phys. 84, 654 (1998) according to recallbration of the bolometer sensitivity by Sarukura et al., the total radiation power from an InAs surface in a magnetic field of 1 T is corrected to be about 50 μW with pump power of 1 W 99, 102, 104, 110
    • (1998) J. Appl. Phys. , vol.84 , pp. 654
    • Sarukura, N.1    Ohtake, H.2    Izumida, S.3    Liu, Z.4
  • 15
    • 0004254425 scopus 로고
    • O. Madelung, M. Schulz, H. Weiss (Eds.), Landolt-Börnstein, New Series III 17a-h (Springer, Berlin, Heidelberg) 102
    • O. Madelung, M. Schulz, H. Weiss (Eds.): Semiconductors, Landolt-Börnstein, New Series III 17a-h (Springer, Berlin, Heidelberg 1987) 102
    • (1987) Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.