High-efficiency UV LEDs using quaternary InAlGaN

Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)

Volumn 157, Issue 3, 2006, Pages 43-51

  Hirayama, Hideki ^a   Kyono, Takashi ^b   Akita, Katsushi ^b   Nakamura, Takao ^b   Ishibashi, Koji ^a  

^a RIKEN   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

GaN substrate; In segregation; Quaternary InAlGaN; UV LEDs

Indexed keywords

CRYSTAL ORIENTATION; LIGHT EMISSION; LIGHTING; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

GAN SUBSTRATE; INJECTION CURRENTS; QUATERNARY INALGAN; SAPPHIRE SUBSTRATES; THREADING DISLOCATIONS;

LIGHT EMITTING DIODES;

EID: 33748852975     PISSN: 04247760     EISSN: 15206416     Source Type: Journal    
DOI: 10.1002/eej.20287     Document Type: Article

References (11)

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