Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1-xGex and Si1-yCy buffer layers

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 411-415

  Kim, Joo Hyung ^a   Grishin, Alexander M ^a   Radamson, Henry H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Heteroepitaxial film structure on Si; High resolution reciprocal lattice mapping (HRRLM); Manganites; Strain effect; Temperature coefficient of resistance (TCR)

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FILM GROWTH; GERMANIUM; SILICON; SURFACE ROUGHNESS; THIN FILMS;

HETEROEPITAXIAL FILM STRUCTURE; HIGH RESOLUTION RECIPROCAL LATTICE MAPPING (HRRLM); MANGANITES; STRAIN EFFECTS; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

LANTHANUM ALLOYS;

EID: 33748746242     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.222     Document Type: Article

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