Improvement of the transfer coefficient of GaAs/Si spin-valve transistors

Journal of Magnetism and Magnetic Materials

Volumn 226-230, Issue PART II, 2001, Pages 2081-2083

  Dessein, K ^a,b   Anil Kumar, P S ^c   Lagae, L ^a   De Boeck, J ^a   Delaey, L ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Amorphization; Metal semiconductor interfaces; Spin valve transistor; Wafer bonding

Indexed keywords

AMORPHIZATION; BONDING; ELECTRON TUBES; ELECTROSPINNING; GALLIUM ARSENIDE; MAGNETIC DEVICES; MAGNETIC MOMENTS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM; WAFER BONDING;

COLLECTOR CURRENTS; ELECTRON SPINS; INJECTED CURRENT; METAL SEMICONDUCTOR INTERFACE; SENSOR APPLICATIONS; SPIN VALVE TRANSISTORS; TRANSFER COEFFICIENT; VACUUM BONDING;

TRANSISTORS;

EID: 33748707161     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00012-9     Document Type: Article

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