Production and properties of In/HgGa2S4 Schottky barriers

Semiconductors

Volumn 33, Issue 10, 1999, Pages 1108-1110

  Rud', V Yu ^a   Rud', Yu V ^b   Ohmer, M C ^c   Schunemann, P G ^d  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d BAE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033212230     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187875     Document Type: Article

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