Influence of the dopant concentration on the photoemission in NEA GaAs photocathodes

Vacuum

Volumn 48, Issue 2, 1997, Pages 155-160

  Vergara, G ^a   Gomez L J ^a   Capmany, J ^a   Montojo, M T ^a  

^a Ctro Invest y Desarrollo Armada   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; IMPURITIES; LIGHT ABSORPTION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

NEGATIVE ELECTRON AFFINITY (NEA);

PHOTOCATHODES;

EID: 0031071432     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(96)00234-5     Document Type: Article

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