Theoretic optimization of p-type doping concentration in GaAs photocathodes

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology

Volumn 24, Issue 3, 2004, Pages 195-198

  Du, Xiaoqing ^a   Chang, Benkang ^a   Zong, Zhiyuan ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Diffusion length; Doping; Escape probability; GaAs photocathode; Quantum efficiency

Indexed keywords

DIFFUSION LENGTH; DOPING CONCENTRATION; ESCAPE PROBABILITY; SURFACE ELECTRON;

DIFFUSION; DOPING (ADDITIVES); ELECTRONS; PHOTOCATHODES; QUANTUM EFFICIENCY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4344644331     PISSN: 02539748     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Liu Y Z, Moll J L, Spicer W E. Quantum yield of GaAs semi-transparent photocathodes. Applied Physics Letters, 1970, 17(2): 60-62
2. Burt M G, Inkson J G. A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters. Journal of Physics D: Applied Physics, 1976, 9: 43-53
3. Fisher D G, Enstrom R E, Escher J S et al. Photoelectron surface escape probability of (Ga, In) As: Cs-O in the 0.9 to 1.6 μm. Journal of Applied Physics, 1972: 43(9): 3815-3823
4. Gao Huairong. Investigation of the mechanism of the activation of GaAs negative electron affinity phototocathodes. Journal of Vacuum Science Technology A, 1987, 5(4): 1295-1298
5. Williams B F, Tietjien J J. Current status of negative electron affinity devices. Proceedings of the IEEE, 1971, 59(10): 1489-1497
6. Antypas G A, Escher J S, Edgecumbe J et al. Broadband GaAs transmission photocathode. Journal of Applied Physics, 1978, 49(7): 4301-4302