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Volumn 40, Issue 3, 2004, Pages 173-174

Low-noise silicon carbide X-ray sensor with wide operating temperature range

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRONS; GAMMA RAYS; PHOTOELECTRICITY; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; X RAY SPECTROSCOPY; X RAYS;

EID: 1242298644     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040126     Document Type: Article
Times cited : (10)

References (10)
  • 1
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    • SiC power-switching devices - The second electronics revolution?
    • Cooper, J.A., and Agarwal, A.: 'SiC power-switching devices - the second electronics revolution?', Proc. IEEE, 2002, 90, (6), pp. 956-968
    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 956-968
    • Cooper, J.A.1    Agarwal, A.2
  • 2
    • 0038642784 scopus 로고    scopus 로고
    • SiC microwave power technologies
    • Clarke, R.C., and Palmour, J.W.: 'SiC microwave power technologies', Proc. IEEE, 2002, 90, (6), pp. 987-992
    • (2002) Proc. IEEE , vol.90 , Issue.6 , pp. 987-992
    • Clarke, R.C.1    Palmour, J.W.2
  • 3
    • 0036568312 scopus 로고    scopus 로고
    • A review of SiC static induction transistor development for high frequency power amplifiers
    • Sung, Y.M., et al.: 'A review of SiC static induction transistor development for high frequency power amplifiers', Solid-State Electron., 2002, 46, pp. 605-613
    • (2002) Solid-state Electron. , vol.46 , pp. 605-613
    • Sung, Y.M.1
  • 4
    • 1242349818 scopus 로고    scopus 로고
    • number dedicated to silicon carbide
    • IEEE Trans. Electron Devices, 1999, 46, (3), (number dedicated to silicon carbide)
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.3
  • 5
    • 0033339794 scopus 로고    scopus 로고
    • Simultaneous measurement of neutron and gammaray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors
    • Dulloo, A.R., Ruddy, F.H., Seidel, J.G., Davison, C., Flinchbaugh, T., and Daubenspeck, T.: 'Simultaneous measurement of neutron and gammaray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors', IEEE Trans. Nucl. Sci., 1999, 46, pp. 275-279
    • (1999) IEEE Trans. Nucl. Sci. , vol.46 , pp. 275-279
    • Dulloo, A.R.1    Ruddy, F.H.2    Seidel, J.G.3    Davison, C.4    Flinchbaugh, T.5    Daubenspeck, T.6
  • 6
    • 0343374874 scopus 로고    scopus 로고
    • Epitaxial silicon carbide charge particle detectors
    • Nava, F., Vanni, P., Lanzieri, C., and Canali, C.: 'Epitaxial silicon carbide charge particle detectors', Nucl. Instr. Meth., 1999, A437, pp. 354-358
    • (1999) Nucl. Instr. Meth. , vol.A437 , pp. 354-358
    • Nava, F.1    Vanni, P.2    Lanzieri, C.3    Canali, C.4
  • 7
    • 0035307987 scopus 로고    scopus 로고
    • X-Ray detection with epitaxial silicon carbide
    • Bertuccio, G., Casiraghi, R., and Nava, F.: 'X-Ray detection with epitaxial silicon carbide', IEEE Trans. Nucl. Sci., 2001, 48, pp. 232-233
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 232-233
    • Bertuccio, G.1    Casiraghi, R.2    Nava, F.3
  • 8
    • 0037295009 scopus 로고    scopus 로고
    • Study of silicon carbide for X-ray detection and spectroscopy
    • Bertuccio, G., and Casiraghi, R.: 'Study of silicon carbide for X-ray detection and spectroscopy', IEEE Trans. Nucl. Sci., 2003, 50, pp. 175-185
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 175-185
    • Bertuccio, G.1    Casiraghi, R.2
  • 9
    • 0027553220 scopus 로고
    • A novel charge sensitive preamplifier without the feedback resistor
    • Bertuccio, G., Rehak, P., and Xi, D.: 'A novel charge sensitive preamplifier without the feedback resistor', Nucl Instr. Meth. Phys. Res., 1993, A326, pp. 71-76
    • (1993) Nucl Instr. Meth. Phys. Res. , vol.A326 , pp. 71-76
    • Bertuccio, G.1    Rehak, P.2    Xi, D.3
  • 10
    • 33645405191 scopus 로고
    • A method for the determination of the noise parameters in preamplifying systems for semiconductor radiatio.n detectors
    • Bertuccio, G., and Pullia, A.: 'A method for the determination of the noise parameters in preamplifying systems for semiconductor radiatio.n detectors', Rew. Sci. Instr., 1993, 64, pp. 3294-3298
    • (1993) Rew. Sci. Instr. , vol.64 , pp. 3294-3298
    • Bertuccio, G.1    Pullia, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.