Photovoltaic properties of n-C:P/p-Si cells deposited by XeCl eximer laser using graphite target

Solar Energy Materials and Solar Cells

Volumn 90, Issue 18-19, 2006, Pages 3205-3213

  Rusop, Mohamad ^a   Mominuzzaman, Shariff M ^b   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, M ^c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^c CHUBU UNIVERSITY   (Japan)

Author keywords

Carbon; Heterojunction; Phosphorus; Pulsed laser deposition

Indexed keywords

CARBON; CURRENT VOLTAGE CHARACTERISTICS; ENERGY EFFICIENCY; EXCIMER LASERS; GRAPHITE; HETEROJUNCTIONS; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION; QUANTUM EFFICIENCY;

ENERGY CONVERSION EFFICIENCY; PHOTOVOLTAIC PROPERTIES; RECTIFYING CURVE; ROOM TEMPERATURE;

SOLAR CELLS;

EID: 33748323134     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.06.018     Document Type: Article

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