Structural, ferroelectric, and dielectric properties of vanadium-doped Bi4-x/3Ti3-xvxO12

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Mao, X Y ^a   He, J H ^a   Zhu, J ^a   Chen, X B ^a  

^a YANGZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); FERROELECTRICITY; MICROSTRUCTURE; OXYGEN; VANADIUM;

DIELECTRIC LOSS; OXYGEN VACANCIES; OXYGEN VACANCY CONCENTRATION;

CERAMIC MATERIALS;

EID: 33748314832     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234822     Document Type: Article

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