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Volumn 6, Issue 2, 2006, Pages 163-168

Via-depletion electromigration in copper interconnects

Author keywords

Cu interconnect; Electromigration; Liner; Redundancy; Reliability; Via; Void

Indexed keywords

ELECTROMIGRATION; OPTIMIZATION; REDUNDANCY; RELIABILITY; SEMICONDUCTOR MATERIALS;

EID: 33748094438     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.876595     Document Type: Conference Paper
Times cited : (23)

References (7)
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    • Reliability challenges for copper interconnects
    • Mar.
    • B. Li, T. D. Sullivan, T. C. Lee, and D. Badami, "Reliability challenges for copper interconnects," Microelectron. Reliab., vol. 44, no. 3, pp. 365-380, Mar. 2004.
    • (2004) Microelectron. Reliab. , vol.44 , Issue.3 , pp. 365-380
    • Li, B.1    Sullivan, T.D.2    Lee, T.C.3    Badami, D.4
  • 3
    • 0036089114 scopus 로고    scopus 로고
    • Investigation of via-dominated multi-modal electromigration failure distributions in dual damascene Cu interconnects with a discussion of the statistical implications
    • J. Gill, T. Sullivan, S. Yankee, H. Barth, and A. von Glasow, "Investigation of via-dominated multi-modal electromigration failure distributions in dual damascene Cu interconnects with a discussion of the statistical implications," in Proc. IEEE 40th Annu. Reliab. Phys. Symp., 2002, pp. 298-304.
    • (2002) Proc. IEEE 40th Annu. Reliab. Phys. Symp. , pp. 298-304
    • Gill, J.1    Sullivan, T.2    Yankee, S.3    Barth, H.4    Von Glasow, A.5
  • 4
    • 0037805706 scopus 로고    scopus 로고
    • Effect of liner thickness on electromigration lifetime
    • Jun.
    • E. G. Liniger, C.-K. Hu, L. M. Gignac, and A. Simon, "Effect of liner thickness on electromigration lifetime," J. Appl. Phys., vol. 93, no. 12, pp. 9576-9582, Jun. 2003.
    • (2003) J. Appl. Phys. , vol.93 , Issue.12 , pp. 9576-9582
    • Liniger, E.G.1    Hu, C.-K.2    Gignac, L.M.3    Simon, A.4
  • 5
    • 33644962475 scopus 로고    scopus 로고
    • A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
    • M. Angyal et al., "A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications," in Proc. Adv. Metallization Conf., 2005, pp. 39-46.
    • (2005) Proc. Adv. Metallization Conf. , pp. 39-46
    • Angyal, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.