Evaluating films for high transmission attenuated phase shift masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6283 II, Issue , 2006, Pages

  Nemoto, Satoru ^a   Komizo, Toru ^a   Kikuchi, Yasutaka ^a   Gallagher, Emily ^b   Benz, Jason ^b   Hibbs, Michael ^b   Haraguchi, Takashi ^c  

^a Toppan Electronics Inc   (United States)

^b IBM MICROELECTRONICS   (United States)

^c TOPPAN PRINTING CO LTD   (Japan)

Author keywords

45nm lithography; Attenuated phase shift mask; High transmission

Indexed keywords

45NM LITHOGRAPHY; ATTENUATED PHASE SHIFT MASK; BLANKET FILM TRANSMISSION; HIGH TRANSMISSION;

ATTENUATION; DURABILITY; METRIC SYSTEM; REFLECTION; SURFACE PROPERTIES;

THIN FILMS;

EID: 33748033724     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.681767     Document Type: Conference Paper

References (4)

1. High transmission attenuated PSM - Benefit and Limitations through a validation study of 33%, 20% and 6% transmission masks, SPIE Vol. 4000(2000), pp. 1163-1174.
2. Patterning of Ta/TaO2 High Transmission EAPSM Materials for 193 nm Technology, SPIE Vol. 5853(2005), pp. 463-472.
3. Development of attenuated PSM shifter for F2 and high transmission ArF lithography, SPIE Vol. 5130(2003), pp. 39-50.
4. Evaluation of 193 nm Alternating Aperture Phase Shift Mask Dry Etch Processes, SPIE Vol. 5130(2003), pp. 253-263.