Improvement of CO sensitivity in GaN-based gas sensors

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 1047-1051

  Cho, Eunjung ^a,b   Pavlidis, Dimitris ^a,b   Zhao, Guangyuan ^b   Hubbard, Seth M ^c   Schwank, Johannes ^b  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF MICHIGAN   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

Author keywords

CO; GaN; Gas sensor; Pt Schottky diode

Indexed keywords

CARBON MONOXIDE; GALLIUM NITRIDE; MORPHOLOGY; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; THERMAL EFFECTS;

CO SENSITIVITY; PT FILMS; PT SCHOTTKY DIODE; SAPPHIRE SUBSTRATE;

CHEMICAL SENSORS;

EID: 33747881056     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.1047     Document Type: Conference Paper

References (14)

1. I. Lundström, M.S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field-effective transistor," Appl. Phys. Lett., vol.26, pp.55-57, 1976.
2. P. Tobias, P. Martesson, A. Goras, I. Lundström, and A.L. Spetz, "Moving gas outlets for the evaluation of gas sensors," Sens. Actuators B, vol.58, pp.389-393, 1999.
3. V. Tilak, K. Matocha, and P. Sandvik, "Pt/GaN Schottky diodes for harsh environment NO sensing application," Phys. Status Solidi C, pp.2555-2558, 2005.
4. G.Y. Zhao, W. Shutton, D. Pavlidis, E.L. Pinner, J. Schwank, and S.M. Hubbard, "A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si," IEICE Trans. Electron., vol.E86-C, no.10, pp.2027-2031, Oct. 2003.
5. J.H. Kim, B.P. Gila, G.Y. Chung, C.R. Abernathy, S.J. Peatron, and F. Ren, "Hydrogen-sensitive GaN Schottky diodes," Solid-State Electron., vol.47, pp.1069-1073, 2003.
6. V. Tilak, M. Ali, V. Cimalla, V. Manivannan, P. Sandvik, J. Fedison, O. Ambacher, and D. Merfeld, "Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing application," Proc. Mater. Res. Soc., Boston, MA, Dec. 2004.
7. 2 interface," J. Appl. Phys., vol.78, no.7, pp.988-996, 1995.
8. L.-G. Ekedahl, M. Eriksson, and I. Lundström, "Hydrogen sensing mechanism of metal-insulator interfaces," Accounts Chem. Res., vol.31, no.5, pp.249-256, 1998.
9. J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, L. Görgens, and G. Dollinger, "Hydrogen response mechanism of Pt-GaN Schottky diodes," Appl. Phys. Lett., vol.80, pp.1222-1224, 2002.
10. O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Spetz, M. Stutzmann, and M. Eickhoff, "Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes," Appl. Phys. Lett., vol.83, pp.773-775, 2003.
11. G.A. Somorjai, Introduction to Surface Chemistry and Catalysis, Wiely Inter Science, 1993.
12. I. Lundström and L. Petersson, "Chemical sensors with catalytic metal," J. Vac. Sci. Technol. A, vol.14, pp.1539-1545, 1996.
13. A. Spetz, M. Armgarth, and I. Lundström, "Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates," J. Appl. Phys., vol.64, no.3, pp.1274-1283, 1988.
14. I. Lundström, A. Spetz, F. Winquist, U. Ackelid, and H. Sundgren, "Catalytic metals and field-effect devices - A useful combination," Sens. Actuators B, vol.1, pp.15-20, 1990.