A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si

IEICE Transactions on Electronics

Volumn E86-C, Issue 10, 2003, Pages 2027-2031

  Zhao, Guangyuan ^a   Sutton, William ^a   Pavlidis, Dimitris ^a   Piner, Edwin L ^b   Schwank, Johannes ^a   Hubbard, Seth ^a  

^a University of Michigan   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN; Gas sensor; Schottky diode; Sensitivity

Indexed keywords

CHEMICAL SENSORS; DIFFUSION IN GASES; HETEROJUNCTIONS; INTERFACES (MATERIALS); OHMIC CONTACTS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SENSITIVITY ANALYSIS; SILICA; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL POLARIZATION;

SCHOTTKY BARRIER DIODES;

EID: 0242495770     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

1. B.P. Luther, S.D. Wolter, and S.E. Mohney, "High temperature Pt Schottky diode gas sensors on n-type GaN," Sens. Actuators B, vol.56, pp.164-168, July 1999.
2. J. Schalwig, G. Muller, M. Eickhoff, O. Ambacher, and M. Stutzmann, "Group III-nitride-based gas sensors for combustion monitoring," Mater. Sci. and Eng. B, vol.93, pp.207-214, May 2002.
3. I. Lundstrom, M.S. Shivaraman, C. Svensson, and L. Lundkvist, "Hydrogen gas aenaitive MOS field-effect transistor," Appl. Phys. Lett., vol.26, pp.55-57, Jan. 1975.
4. I. Lundstrom, M. Armgarth, and L. Petterson, "Physics with catalytic metal gate chemical sensors," CRC critical reviews in solid sate and mater, sci., vol.15, pp.201-278, 1989.
5. A. Baranzahi, A. Lloyd Spetz, B. Andersson, and I. Lundstrom, "Gas sensitive field effect devices for high temperatures," Sens, Actuatore B, vol.26, pp.165-169, May 1995.
6. O. Ambacher J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, and L.F. Eastman, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol.85, pp.3222-3233, March 1999.
7. M. Karlsteen, A. Baranzahi, A. Lloyd Spetz, Willaander, and I. Lundtröm, "Electrical properties of inhomogeneous SiC MIS structures," J. Electron. Mater., vol.24, pp.853-861, 1995.
8. G. Sberveglieri, "Recent developments in semiconducting thin-film gas sensors," Sens, Actuatore B, vol.23, pp.103-109, 1995.