Simulation of 2D quantum transport in ultrashort DG-MOSFETs: A fast algorithm using subbands

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 267-270

  Abdallah, N B ^a   Polizzi, E ^b   Mouis, M ^c   Mehats F ^a  

^a INSTITUT DE MATHÉMATIQUES DE TOULOUSE   (France)

^b PURDUE UNIVERSITY   (United States)

^c IMEP LAHC   (France)

Author keywords

Boundary conditions; Costs; Eigenvalues and eigenfunctions; Electrons; Equations; Geometry; Matrix decomposition; MOSFETs; Silicon; Wave functions

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; COSTS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONS; GEOMETRY; NUMERICAL METHODS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCHRODINGER EQUATION; SEMICONDUCTOR DEVICES; SILICON; WAVE FUNCTIONS;

DOUBLE-GATE MOSFETS; EQUATIONS; FAST ALGORITHMS; MATRIX DECOMPOSITION; MOSFETS; NUMERICAL COSTS; QUANTUM TRANSPORT; ULTRASHORT CHANNELS;

MOSFET DEVICES;

EID: 33747792652     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233688     Document Type: Conference Paper

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