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Volumn 46, Issue 9-11, 2006, Pages 1498-1503

Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE NETWORKS; INTEGRATED CIRCUITS; SILICON COMPOUNDS;

EID: 33747786680     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.025     Document Type: Article
Times cited : (12)

References (6)
  • 5
    • 0036607445 scopus 로고    scopus 로고
    • Dopant profiling with the scanning electron microscope - A study of Si
    • Elliott S.L., Broom R.F., and Humphreys C.J. Dopant profiling with the scanning electron microscope - A study of Si. Journal of Applied Physics 91 11 (2002) 9116
    • (2002) Journal of Applied Physics , vol.91 , Issue.11 , pp. 9116
    • Elliott, S.L.1    Broom, R.F.2    Humphreys, C.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.