Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 394-398

  Merdzhanova, T ^a,b   Carius, R ^a   Klein, S ^a   Finger, F ^a   Dimova Malinovska, D ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Defect states; Photoluminescence; Silicon; Temperature dependent measurements

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY GAP; FILM GROWTH; MICROSTRUCTURE; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES;

DEFECT STATES; PHOTOLUMINESCENCE SPECTROSCOPY; RECOMBINATION TRANSITION; TEMPERATURE DEPENDENT MEASUREMENTS;

AMORPHOUS SILICON;

EID: 33747443070     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.114     Document Type: Article

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