40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 554-557

  Gerlach, Philipp ^a   Peschke, Martin ^a,b   Saravanan, Brem Kumar ^a,b   Knoedl, Thomas ^b   Hanke, Christian ^b   Stegmueller, Bernhard ^b   Michalzik, Rainer ^a  

^a UNIVERSITY OF ULM   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; MODULATORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD ELEMENTS;

ELECTROABSORPTION MODULATOR; INGAALAS; SUPPRESSION RATIO; THRESHOLD CURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747423992     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517557     Document Type: Conference Paper

References (6)

1. R. Lewén, S. Irmscher, U. Westergren, L. Thylén, and U. Eriksson, "Ultra high-speed segmented traveling-wave eleetroabsorption modulators," in Proc. Optical Fiber Communications Conf., OFC 2003, postdeadline paper PD38. Atlanta, GA, USA, February 2003.
2. H. Kawanishi, Y. Yamauchi, N. Mineo, Y. Shibuya, H. Murai, K. Yamada, and H. Wada, "EAM-integrated DFB laser modules with more than 40-GHz bandwidth," IEEE Photon. Technol. Lett., vol. 13, no. 9, pp. 954-956, 2001.
3. B. Stegmueller and C. Hanke, "High-frequency properties of 1.3 μm and 1.55 μm electro-absorption modulators integrated with DFB lasers based on identical MQW-double stack active layer," in Proc. LEOS 2002, vol. 1, pp. 115-116. Glasgow, Scotland, UK, November 2002.
4. T. Knoedl, C. Hanke, B.K. Saravanan, M. Peschke, R. Schreiner, and B. Stegmueller, "Integrated 1.3 μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure," SPIE Proceedings, vol. 5453, pp. 1-7, 2004.
5. M. Peschke, T. Knoedl, and B. Stegmueller, "Simulation and design of an active MQW layer with high static gain and absorption modulation," in Proc. Numerical Simulation of Semiconductor Devices, NUSOD 2003, pp. 15-16, Tokyo, Japan, October 2003.
6. P. Gerlach, M. Peschke, C. Hanke, B.K. Saravanan, and R. Michalzik, "High-frequency analysis of laser-integrated lumped electroabsorption modulators," IEE Proceedings Optoelectronics, Special Issue on Semiconductor Optoelectronics, vol. 152, 2005, in press.